Rigorous Simulations of 3D Patterns on Extreme Ultraviolet Lithography Masks

摘要

Simulations of light scattering off an extreme ultraviolet lithography maskwith a 2D-periodic absorber pattern are presented. In a detailed convergencestudy it is shown that accurate results can be attained for relatively large 3Dcomputational domains and in the presence of sidewall-angles andcorner-roundings.